A Product Line of
Diodes Incorporated
ZXMN3AMC
Typical Electrical Characteristics - Continued
300
10
250
V GS = 0V
f = 1MHz
8
I D = 2.5A
200
150
C ISS
C OSS
6
100
50
C RSS
4
2
V DS = 15V
0
0.1
1 10
V DS - Drain - Source Voltage (V)
0
0
1 2
Q - Charge (nC)
3
4
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Test Circuits
Current
Q G
regulator
12V
5 0k
Same as
D.U.T
V G
Q GS
Q GD
Charge
I G
V GS
D.U.T
V DS
I D
V DS
Basic gate charge waveform
Gate charge test circuit
90%
10%
V GS
R G
V GS
R D
V DS
V DD
t d(on)
t (on)
t r
t d(off)
t (on)
t r
Switching time waveforms
Switching time test circuit
ZXMN3AMC
Document number: DS35087 Rev. 1 - 2
6 of 8
www.diodes.com
December 2010
? Diodes Incorporated
相关PDF资料
ZXMN3B01FTA MOSFET N-CHAN 30V 2A SOT23-3
ZXMN3B04N8TC MOSFET N-CHAN 30V 8SOIC
ZXMN3B14FTA MOSFET N-CHAN 30V 3.5A SOT23-3
ZXMN3F30FHTA MOSFET N-CHAN 30V SOT23-3
ZXMN3F31DN8TA MOSFET N-CHAN 30V 8SOIC DUAL
ZXMN3G32DN8TA MOSFET N-CHAN 30V 8SOIC DUAL
ZXMN4A06GTA MOSFET N-CH 40V 5A SOT223
ZXMN4A06KTC MOSFET N-CHAN 40V 10.9A DPAK
相关代理商/技术参数
ZXMN3B01F 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
ZXMN3B01FTA 功能描述:MOSFET 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN3B01FTC 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
ZXMN3B04N8 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
ZXMN3B04N8TA 功能描述:MOSFET 30V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN3B04N8TC 功能描述:MOSFET 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN3B14F 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
ZXMN3B14F(2) 制造商:未知厂家 制造商全称:未知厂家 功能描述: